ATP405 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1458
ATP405
SANYO Semiconductors
DATA SHEET
ATP405
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{10V drive.}
• _{Avalanche resistance guarantee.}
• _{Halogen free compliance.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=30V, L=100μH, IAV=40A
*2 L≤100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
100
V
±20
V
40
A
160
A
70
W
150
°C
--55 to +150
°C
148 mJ
40
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : ATP405
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
min
100
2.0
Ratings
Unit
typ
max
V
10
μA
±10
μA
3.5
V
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are
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independent device, the customer should always evaluate and test devices mounted in the customer's
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42209QA MS IM TC-00001943 No. A1458-1/4