ATP218_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
ATP218
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=4.5V
ID=25A, VGS=2.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=4.5V, ID=100A
IS=100A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=50A
RL=0.3Ω
D
VOUT
ATP218
P.G
50Ω
S
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
0.5
1.3
V
260
S
2.9
3.8 mΩ
4.0
5.6 mΩ
6600
pF
780
pF
600
pF
88
ns
960
ns
340
ns
320
ns
70
nC
20
nC
14
nC
0.91
1.2
V
Ordering Information
Device
ATP218-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.8970-2/7