ATP218_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN8970A
ATP218
SANYO Semiconductors
DATA SHEET
ATP218
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=2.9mΩ(typ.)}
• _{2.5V drive}
• _{Protection diode in}
• _{Input Capacitance Ciss=6600pF(typ.)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=15V, L=100μH, IAV=50A
*2 L≤100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
30
V
±10
V
100
A
300
A
60
W
150
°C
--55 to +150
°C
235 mJ
50
A
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP218-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP218
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Electrical Connection
2,4
1
3
http://semicon.sanyo.com/en/network
62012 TKIM/51111PA TKIM TC-00002592 No.8970-1/7