ATP106 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP106
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, ID=--1mA
VDS=--10V, ID=--15A
ID=--15A, VGS=--10V
ID=--8A, VGS=--4.5V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--20V, VGS=--10V, ID=--30A
VDS=--20V, VGS=--10V, ID=--30A
VDS=--20V, VGS=--10V, ID=--30A
IS=--30A, VGS=0V
Package Dimensions
unit : mm (typ)
7057-001
6.5
1.5
4.6
2.6
0.4
0.4
4
Ratings
Unit
min
typ
max
--1.5
--2.6
V
28
S
19
25 mΩ
29
41 mΩ
1380
pF
210
pF
150
pF
12
ns
120
ns
110
ns
90
ns
29
nC
6.4
nC
5.9
nC
--0.97
--1.5
V
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --20V
ID= --15A
RL=1.33Ω
D
VOUT
ATP106
P.G
50Ω
S
No. A1597-2/4