ATP106 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1597
ATP106
SANYO Semiconductors
DATA SHEET
ATP106
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance.}
• _{Large current.}
• _{Slim package.}
• _{4.5V drive.}
• _{Halogen free compliance.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (PW≤10μs)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--10V, L=200μH, IAV=--15A
*2 L≤200μH, Single pulse
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--40
V
±20
V
--30
A
--90
A
40
W
150
°C
--55 to +150
°C
30 mJ
--15
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : ATP106
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
VGS=±16V, VDS=0V
min
--40
Ratings
Unit
typ
max
V
--1
μA
±10
μA
Continued on next page.
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N0409PA TK IM TC-00002145 No. A1597-1/4