2SJ684 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

2SJ684
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
VGS(off)
⏐^yfs⏐
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, ID=--1mA
VDS=--10V, ID=--23A
ID=--23A, VGS=--10V
ID=--23A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--45A
VDS=--50V, VGS=--10V, ID=--45A
VDS=--50V, VGS=--10V, ID=--45A
IS=--45A, VGS=0V
Package Dimensions
unit : mm (typ)
7002-001
8.2
7.8
6.2
0.6
3
Ratings
Unit
min
typ
max
--1.2
--2.6
V
32
53
S
18.5
24 mΩ
22
31 mΩ
14500
pF
700
pF
550
pF
110
ns
270
ns
1020
ns
400
ns
270
nC
40
nC
60
nC
--0.9
--1.5
V
12
1.0
1.0
2.54
2.54
5.08
10.0
6.0
0.3
0.6
1 : Gate
7.8
2 : Source
3 : Drain
SANYO : ZP
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --50V
ID= --23A
RL=2.2Ω
D
VOUT
2SJ684
P.G
50Ω
S
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ684
VDD
No. A1058-2/4