2SJ683 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

2SJ683
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
VGS(off)
⏐^yfs⏐
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, ID=--1mA
VDS=--10V, ID=--33A
ID=--33A, VGS=--10V
ID=--33A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--65A
VDS=--30V, VGS=--10V, ID=--65A
VDS=--30V, VGS=--10V, ID=--65A
IS=--65A, VGS=0V
Package Dimensions
unit : mm (typ)
7002-001
8.2
7.8
6.2
0.6
3
Ratings
Unit
min
typ
max
--1.2
--2.6
V
39
65
S
8.0
10.5 mΩ
10.5
15 mΩ
15500
pF
1000
pF
800
pF
110
ns
620
ns
900
ns
580
ns
290
nC
50
nC
50
nC
--0.9
--1.5
V
12
1.0
1.0
2.54
2.54
5.08
10.0
6.0
0.3
0.6
1 : Gate
7.8
2 : Source
3 : Drain
SANYO : ZP
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --30V
ID= --33A
RL=0.9Ω
D
VOUT
2SJ683
P.G
50Ω
S
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ683
VDD
No. A1057-2/4