2SJ661 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7513-002
10.2
2SJ661
Symbol
Conditions
min
Ciss
Coss
Crss
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
td(on)
tr
See specified Test Circuit.
See specified Test Circuit.
td(off)
tf
Qg
Qgs
Qgd
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--38A
VDS=--30V, VGS=--10V, ID=--38A
VDS=--30V, VGS=--10V, ID=--38A
VSD
IS=--38A, VGS=0V
Package Dimensions
unit : mm
7001-003
4.5
10.2
1.3
Ratings
Unit
typ
max
4360
pF
470
pF
335
pF
33
ns
285
ns
295
ns
195
ns
80
nC
15
nC
12
nC
--1.0
--1.2
V
4.5
1.3
1.2
0.8
0.4
123
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --30V
ID= --19A
RL=1.58Ω
D
VOUT
2SJ661
P.G
50Ω
S
12 3
0.8
1.2
2.55
2.55
2.55
2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
DUT
VDD
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