2SJ660 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7513-002
10.2
2SJ660
Symbol
Conditions
min
Ciss
Coss
Crss
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
td(on)
tr
See specified Test Circuit.
See specified Test Circuit.
td(off)
tf
Qg
Qgs
Qgd
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--26A
VDS=--30V, VGS=--10V, ID=--26A
VDS=--30V, VGS=--10V, ID=--26A
VSD
IS=--26A, VGS=0V
4.5
1.3
Package Dimensions
unit : mm
7001-003
10.2
Ratings
Unit
typ
max
2200
pF
220
pF
165
pF
18
ns
150
ns
180
ns
130
ns
45
nC
7.4
nC
9
nC
--0.98
--1.2
V
4.5
1.3
1.2
0.8
123
2.55
2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --30V
ID= --13A
RL=2.3Ω
D
VOUT
2SJ660
P.G
50Ω
S
12 3
0.8
1.2
2.55
2.55
2.55
2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
DUT
VDD
No.8585-2/4