2SJ659 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device

2SJ659
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS= ±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--7A
ID=--7A, VGS=--10V
ID=--7A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--14A
VDS=--30V, VGS=--10V, ID=--14A
VDS=--30V, VGS=--10V, ID=--14A
IS=--14A, VGS=0V
Ratings
Unit
min
typ
max
--60
V
--1 µA
±10 µA
--1.2
--2.6
V
7
12
S
102
133 mΩ
147
206 mΩ
1020
pF
110
pF
76
pF
10
ns
180
ns
80
ns
100
ns
21
nC
3.8
nC
4.5
nC
--1.0
--1.2
V
Package Dimensions
unit : mm (typ)
7513-002
Package Dimensions
unit : mm (typ)
7001-003
10.2
4.5
1.3
10.2
4.5
1.3
1.2
0.8
0.4
123
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
12 3
0.8
1.2
2.55
2.55
2.55
2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --30V
ID= --7A
RL=4.29Ω
D
VOUT
2SJ659
P.G
50Ω
S
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
DUT
VDD
No.8584-2/4