2SC6106 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm (typ)
7518-003
2SC6106
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω
VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω
VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω
Package Dimensions
unit : mm (typ)
7003-003
Ratings
min
typ
1000
500
8
Unit
max
1.0
V
1.5
V
V
V
V
0.5 µs
3.0 µs
0.3 µs
6.5
2.3
5.0
0.5
4
6.5
2.3
5.0
0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
100Ω
+
470µF
VCC=200V
IC -- VCE
4.0
500mA
3.5
400mA
300mA
3.0
200mA
2.5
2.0
100mA
1.5
50mA
20mA
1.0
0.5
0
IB=0mA
0
1
2
3
4
5
6
7
8
9 10
Collector-to-Emitter Voltage, VCE -- V IT12741
4
VCE=5V
3
IC -- VBE
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT12742
No. A0878-2/4