2SC6106 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Ordering number : ENA0878
2SC6106
SANYO Semiconductors
DATA SHEET
2SC6106
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
• High breakdown voltage and high reliability.
• Ultrahigh-speed switching.
• Wide ASO.
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤300µs, duty cycle≤10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=500V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
Ratings
Unit
1000
V
500
V
7
V
4
A
8
A
1
W
30
W
150
°C
--55 to +150
°C
min
40
8
Ratings
typ
Unit
max
10 µA
10
µA
80
18
MHz
40
pF
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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70407KB TI IM TC-00000387 No. A0878-1/4