2SC5808 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Power Supply Applications

2SC5808
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤300µs, duty cycle≤10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.3A
VCE=5V, IC=1.2A
VCE=5V, IC=1mA
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
IC=1.2A, IB=0.24A
IC=1.2A, IB=0.24A
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133Ω
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133Ω
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133Ω
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
Ratings
Unit
700
V
700
V
400
V
8
V
2.5
A
5
A
1.2
A
1
W
15
W
150
°C
--55 to +150
°C
Ratings
min
typ
20
10
10
20
20
700
400
8
max
10
10
50
0.8
1.5
0.5
Unit
µA
µA
MHz
pF
V
V
V
V
V
µs
2.5
µs
0.25
µs
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