2SC5808 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Switching Power Supply Applications

Ordering number : ENN7079
Features
• High breakdown voltage.
• _{High speed switching.}
• Wide ASO.
• Adoption of MBIT process.
2SC5808
NPN Triple Diffused Planar Silicon Transistor
2SC5808
Switching Power Supply Applications
Package Dimensions
unit : mm
2045B
[2SC5808]
6.5
5.0
2.3
4
0.5
0.85
0.7
0.6
12 3
2.3
2.3
1.2
0.5 _{1 : Base}
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
Package Dimensions
unit : mm
2044B
[2SC5808]
6.5
2.3
5.0
0.5
4
0.85
12
3
0.6
2.3
2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3412 No.7079-1/4