2SC5415A_12 Datasheet, PDF (2/8 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amplifier Applications

2SC5415A
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Cre
⏐S21e⏐²
NF
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=30mA
VCE=5V, IC=70mA
VCE=5V, IC=30mA
VCB=5V, f=1MHz
VCE=5V, IC=30mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
* : The 2SC5415A is classified by 30mA hFE as follows :
Rank
E
F
hFE
90 to 180
135 to 270
Ordering Information
Device
2SC5415AE-TD-E
2SC5415AF-TD-E
Package
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
Ratings
Unit
min
typ
max
1.0
μA
10
μA
90*
270*
70
5
6.7
GHz
1.2
1.8
pF
0.65
pF
7.5
9
dB
1.1
2.0 dB
memo
Pb Free
IC -- VCE
50
0.35mA
0.30mA
40
0.25mA
30
0.20mA
0.15mA
20
0.10mA
10
0.05mA
0
IB=0mA
0
2
4
6
8
10
Collector-to-Emitter Voltage, VCE -- V IT13392
IC -- VBE
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT13393
No. A1080-2/8