2SC5415A_12 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amplifier Applications

Ordering number : ENA1080A
2SC5415A
SANYO Semiconductors
DATA SHEET
2SC5415A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Features
Amplifier Applications
• _{High gain}
: ⏐S21e⏐²=9dB typ (f=1GHz)
• _{High cut-off frequency : fT=6.7GHz typ}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
12
V
2
V
100 mA
800 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SC5415AE-TD-E
2SC5415AF-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
TD
RANK
Electrical Connection
2
1
3
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90512 TKIM/93009AB TKIM TC-00002100 No. A1080-1/8