LE25U40CMC Datasheet, PDF (18/23 Pages) Sanyo Semicon Device – 4M-bit (512K×8) Serial Flash Memory

LE25U40CMC
AC Characteristics
Parameter
Clock frequency
Read instruction(03h)
All instructions except for read(03h)
Input signal rising/falling time
SCK logic high level pulse width
SCK logic low level pulse width
CS setup time
25MHz
40MHz
25MHz
40MHz
CS hold time
Data setup time
Data hold time
CS wait pulse width
Output high impedance time from CS
Output data time from SCK
Output data hold time
Output low impedance time from SCK
HOLD setup time
HOLD hold time
Output low impedance time from HOLD
Output high impedance time from HOLD
WP setup time
WP hold time
Power-down time
Power-down recovery time
Write status register time
Page programming cycle time
Small sector erase cycle time
Sector erase cycle time
Chip erase cycle time
Symbol
fCLK
tRF
tCLHI
tCLLO
tCSS
tCSH
tDS
tDH
tCPH
tCHZ
tV
tHO
tCLZ
tHS
tHH
tHLZ
tHHZ
tWPS
tWPH
tDP
tPDR
tSRW
tPP
tSSE
tSE
tCHE
min
0.1
16
11.5
16
11.5
8
8
2
5
25
1
0
5
3
20
20
Ratings
typ
8
5
4
40
80
0.25
max
25
40
8
11
9
9
3
3
15
5
150
250
2.0
unit
MHz
MHz
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
ms
ms
ms
ms
s
AC Test Condtions
Input pulse level··············· 0.2VDD to 0.8VDD
Input rising/falling time···· 5ns
Input timing level············· 0.3VDD, 0.7VDD
Output timing level ·········· 1/2×VDD
Output load ······················ 30pF
Note: As the test conditions for "typ", the measurements are conducted using 2.5v for VDD at room temperature.
input level
0.8VDD
0.2VDD
input / output timing level
0.7VDD
1/2VDD
0.3VDD
No.A2098-18/23