LE25U40CMC Datasheet, PDF (17/23 Pages) Sanyo Semicon Device – 4M-bit (512K×8) Serial Flash Memory

Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
DC voltage (all pins)
Storage temperature
Symbol
VDD max
VIN/VOUT
Tstg
LE25U40CMC
With respect to VSS
With respect to VSS
Conditions
Ratings
unit
-0.5 to +4.6
V
-0.5 to VDD+0.5
V
-55 to +150
°C
Operating Conditions
Parameter
Operating supply voltage
Operating ambient temperature
Symbol
VDD
Topr
Conditions
Ratings
unit
2.3 to 3.6
V
-40 to 85
°C
Allowable DC Operating Conditions
Parameter
Read mode operating current
Write mode operating current
(erase + page program)
CMOS standby current
Power-down standby current
Input leakage current
Output leakage current
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
ICCR
ICCW
ISB
IDSB
ILI
ILO
VIL
VIH
VOL
VOH
Conditions
SCK=0.1VDD/0.9VDD,
HOLD=WP=0.9VDD, Single
Output = open
Dual
25MHz
40MHz
40MHz
tSSE= tSE= tCHE=typ.,tPP=max
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
IOL=100μA, VDD=VDD min
IOL=1.6mA, VDD=VDD min
IOH=-100μA, VDD=VDD min
Data hold, Rewriting frequency
Parameter
Rewriting frequency
Data hold
condition
Program/Erase
Status resister write
Ratings
unit
min
typ
max
6 mA
10
12 mA
15 mA
50 μA
-0.3
0.7VDD
VDD-0.2
10 μA
2 μA
2 μA
0.3VDD
V
VDD+0.3
V
0.2
V
0.4
V
min
max
unit
100,000
times/ Sector
1,000
times
20
year
Pin Capacitance at Ta=25°C, f=1MHz
Parameter
Symbol
Conditions
Ratings
unit
max
Output pin capacitance
CSO
VSO=0V
12
pF
Input pin Capacitance
CIN
VIN=0V
6
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values
for some of the sampled devices.
No.A2098-17/23