VEC2315 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Ordering number : EN8699
VEC2315
SANYO Semiconductors
DATA SHEET
VEC2315
P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=105mΩ(typ.)}
• _{4V drive}
• _{High-density mounting}
• _{Protection diode in}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--60
V
±20
V
--2.5
A
--10
A
0.9
W
1.0
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7012-002
0.3
0.15
8 7 65
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
TL
Electrical Connection
8
7
6
5
UM
Lot No.
1
2
3
4
http://semicon.sanyo.com/en/network
30712PA TKIM TC-00002731 No.8699-1/4