2SJ658 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Speed Switching Applications

Ordering number : ENN7552
Features
• _{Low ON-resistance.}
• _{High-speed switching.}
• _{2.5V drive.}
2SJ658
P-Channel Silicon MOSFET
2SJ658
High-Speed Switching Applications
Package Dimensions
unit : mm
2178
[2SJ658]
5.0
4.0
4.0
0.45
0.5
0.45
0.44
123
1.3
1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Symbol
Conditions
V(BR)DSS
IDSS
ID=--1mA, VGS=0
VDS=--20V, VGS=0
Ratings
Unit
--20
V
±10
V
--2
A
--8
A
0.7
W
150
°C
--55 to +150
°C
min
--20
Ratings
Unit
typ
max
V
--10
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100561 No.7552-1/4