MGF65A6H Datasheet, PDF (8/14 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A6H, MGF65A6H
1000
Inductive load,
I_C = 60 A, V_CE = 400 V,
V_GE = 15 V, R_G = 10 Ω
t_d(off)
100 _tr
t_f
t_d(on)
10
25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 14. Switching Time vs. Junction
Temperature
1000
Inductive load,
I_C = 60 A, V_CE = 400 V,
V_GE = 15 V, T_J = 175 °C
t_r
100
t_d(off)
t_f
t_d(on)
10
1
10
100
Gate Resistor, R_G (Ω)
Figure 16. Switching Time vs. Gate Resistor
1000
t_d(off)
100
t_f
t_d(on)
10
t_r
Inductive load,
V_CE = 400 V, V_GE = 15 V,
R_G = 10 Ω, T_J = 175 °C
1
1
10
100
Collector Current, I_C (A)
Figure 15. Switching Time vs. Collector Current
5
Inductive load,
I_C = 60 A, V_CE = 400 V,
4 ^{VGE = 15 V, RG = 10 Ω}
E_on + E_off
3
E_on
2
E_off
1
0
25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 17. Switching Loss vs. Junction
Temperature
xGF65A6H-DSE Rev.1.8
SANKEN ELCTRIC CO.,LTD.
8
Nov. 10, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2014