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MGF65A6H Datasheet, PDF (1/14 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode
VCE = 650 V, IC = 60 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A6H, MGF65A6H
Data Sheet
Description
The KGF65A6H and MGF65A6H are 650 V Field
Stop IGBTs. Sanken original trench structure decreases
gate capacitance, and achieves high speed switching and
switching loss reduction. Thus, these Field Stop IGBTs
can improve the efficiency of your circuit.
Features
● Low Saturation Voltage
● High Speed Switching
● With Integrated Fast Recovery Diode
● RoHS Compliant
● VCE ------------------------------------------------------ 650 V
● IC (TC = 100 °C) ----------------------------------------- 60 A
● Short Circuit Withstand Time ----------------------- 10 μs
● VCE(sat)-----------------------------------------------1.9 V typ.
● tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
● VF----------------------------------------------------1.8 V typ.
Applications
● Welding Invertor
● PFC Circuit
Packages
TO247-3L
(4)
TO3P-3L
(4)
(1) (2) (3)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(1)
(3) Emitter
(4) Collector
(3)
Selection Guide
Part Number
KGF65A6H
MGF65A6H
Not to scale
Package
TO247-3L
TO3P-3L
xGF65A6H-DSE Rev.1.8
SANKEN ELCTRIC CO.,LTD.
1
Nov. 10, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2014