M368L1624FTM Datasheet, PDF (3/25 Pages) Sanken electric – 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC

256MB, 512MB Unbuffered DIMM
DDR SDRAM
184Pin Unbuffered DIMM based on 256Mb F-die (x8, x16)
Ordering Information
Part Number
M368L1624FTM-C(L)B3/AA/A2/B0
M368L3223FTN-C(L)B3/AA/A2/B0
M381L3223FTM-C(L)B3/AA/A2/B0
M368L6423FTN-C(L)B3/AA/A2/B0
M381L6423FTM-C(L)B3/AA/A2/B0
Density
128MB
256MB
256MB
512MB
512MB
Organization
16M x 64
32M x 64
32M x 72
64M x 64
64M x 72
Component Composition
16Mx16 (K4H561638F) * 4EA
32Mx8 (K4H560838F) * 8EA
32Mx8 (K4H560838F) * 9EA
32Mx8 (K4H560838F) * 16EA
32Mx8 (K4H560838F) * 18EA
Height
1,250mil
1,250mil
1,250mil
1,250mil
1,250mil
Operating Frequencies
Speed @CL2
Speed @CL2.5
CL-tRCD-tRP
B3(DDR333@CL=2.5)
133MHz
166MHz
2.5-3-3
AA(DDR266@CL=2)
133MHz
133MHz
2-2-2
A2(DDR266@CL=2)
133MHz
133MHz
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
2.5-3-3
Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (128MB, 256MB), double (512MB) sided
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 1.2 May, 2004