SKP253 Datasheet, PDF (2/9 Pages) Sanken electric – MOS FET

MOS FET
SKP253
December 2005
Characteristic
Drain to Source breakdown Voltage
Electrical characteristics
Symbol
Test Conditions
MIN.
(Ta=25°C)
Limits
Unit
TYP. MAX.
V(BR)DSS ID=100μA,VGS=0V
250
V
Gate to Source Leakage Current
IGSS
VGS=±30V
±100 nA
Drain to Source Leakage Current
IDSS
VDS=250V, VGS=0V
100 μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
3.0
4.5
V
Forward Transconductance
Re(Yfs) VDS=10V, ID=10A
8
17
S
Static Drain to Source On-Resistance
RDS(on) ID=10A, VGS=10V
86
95 mΩ
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
VDS=25V
Coss
VGS=0V
f=1MHz
Crss
1600
280
pF
50
Turn-On Delay Time
td(on)
30
ID=10A, VDD≈120V
Rise Time
tr
RL=12Ω, VGS=10V
60
ns
Turn-Off Delay Time
td(off)
RG=5Ω
80
See Fig.2
Fall Time
tf
45
Source-Drain Diode Forward Voltage
VSD
ISD=20A,VGS=0V
1.0
1.5
V
.
Sanken Electric Co.,Ltd.
T02-004EA-051124
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