SKP253 Datasheet, PDF (1/9 Pages) Sanken electric – MOS FET

MOS FET
SKP253
■Features
• Low on-resistance
• Low input capacitance
• Avalanche energy capability guaranteed
■Applications
• PDP driving
• High speed switching
■Package---TO-263
December 2005
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
Characteristic
Symbol
Rating
(Ta=25°C)
Unit
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±20A
A
Pulsed Drain Current
ID(pulse) ¹⁾
±80A
A
Maximum Power Dissipation
Single Pulse Avalanche Energy
PD
EAS ²⁾
40 (Tc=25°C)
W
160
mJ
Avalanche Current
IAS
20
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
- 55 to 150
°C
1) PW≤100μs, duty cycle≤1%
2) VDD=20V, L=740μH, ILp=20A, unclamped, RG=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
1/9
T02-004EA-051124