SAPM01N Datasheet, PDF (1/10 Pages) Sanken electric – silicon power MOSFET

SAPM01N
１ Scope
The present specifications shall apply to Sanken silicon power MOSFET with built-in
temperature compensation diodes, SAPM01N, a complementary device of the SAPM01P,
for audio amplifier applications.
２ Appearance and outline drawings
２-１ Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
２-２ Outline drawings
Refer to Fig.1
２-３ Marking
The type number and lot number shall be marked by white-ink on the body and shall not be
erased easily.
３ Ratings
３-１ Absolute Maximum Ratings (Ta=25℃)
SAPM01N
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V_DSS
150
V
Gate to Source Voltage
V_GSS
±20
V
Continuous Drain Current
I_D
±20
A
Pulsed Drain Current
I_D(pulse)^※1
±80
A
Maximum Power Dissipation
P_D
150 (Tc=25℃)
W
Diode Forward Current
Channel Temperature
Storage Temperature
D_iI_F
10
mA
T_ch
150
℃
T_stg
-40～＋150
℃
※1 P_W≦100μsec, duty cycle≦1%
030416
SSE-22334
1／9
61432