K7B801825M Datasheet, PDF (9/21 Pages) Samsung semiconductor – 256Kx36 & 512Kx18 Synchronous SRAM

K7B803625M
K7B801825M
256Kx36 & 512Kx18 Synchronous SRAM
ASYNCHRONOUS TRUTH TABLE
Operation
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
H
X
High-Z
L
L
DQ
L
H
High-Z
L
X Din, High-Z
L
X
High-Z
Notes
1. X means "Don′t Care".
2. ZZ pin is pulled down internally
3. For write cycles that following read cycles, the output buffers must be
disabled with OE, otherwise data bus contention will occur.
4. Sleep Mode means power down state of which stand-by current does
not depend on cycle time.
5. Deselected means power down state of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 4.6
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD
1.4
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
3.135
3.3
Ground
VSS
0
0
MAX
3.465
3.465
0
UNIT
V
V
V
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
2.375
2.5
Ground
VSS
0
0
MAX
3.465
2.9
0
UNIT
V
V
V
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDITION
MIN
CIN
VIN=0V
-
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
MAX
6
8
UNIT
pF
pF
-9-
November 1999
Rev 5.0