K7B801825M Datasheet, PDF (1/21 Pages) Samsung semiconductor – 256Kx36 & 512Kx18 Synchronous SRAM

K7B803625M
K7B801825M
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
History
Initial draft
0.1
Change DC Characteristics.
ISB value from 60mA to 90mA at -8
ISB value from 50mA to 80mA at -9
ISB value from 40mA to 70mA at -10
ISB1 value from 10mA to 30mA
ISB2 value from 10mA to 30mA
0.2
1. Changed tCD from 8.0ns to 8.5ns at -8
2. Changed tCYC from 13.0ns to 12.0ns at -10
3. Changed DC condition at Icc and parameters
ICC ; from 300mA to 350mA at -8,
from 260mA to 300mA at -9,
from 220mA to 260mA at -10,
ISB ; from 90mA to 130mA at -8,
from 80mA to 120mA at -9,
from 70mA to 110mA at -10,
0.3
1. ADD 119BGA(7x17 Ball Grid Array Package) .
2. ADD x32 organization.
0.4
Add VDDQ Supply voltage( 2.5V )
0.5
Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
1.0
1. Final Spec Release.
2. Remove x32 organization.
2.0
1. Remove VDDQ supply voltage(2.5V)
3.0
1. Changed ICC from 350mA to 330mA at -8.
2. Add bin -7. (tCD 7.5ns).
4.0
1. Add VDDQ supply voltage(2.5V)
5.0
1. Changed tCYC from 12ns to 10ns at -9.
Draft Date
April. 10 . 1998
Aug. 31. 1998
Remark
Preliminary
Preliminary
Sep. 09. 1998
Preliminary
Oct. 15. 1998
Preliminary
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Preliminary
Preliminary
Final
Feb. 25. 1999
Mar. 30. 1999
Final
Final
May. 13. 1999
Nov. 19. 1999
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
November 1999
Rev 5.0