K4X1G323PC-L Datasheet, PDF (9/20 Pages) Samsung semiconductor – 32Mx32 Mobile DDR SDRAM

K4X1G323PC - L(F)E/G
Mobile DDR SDRAM
9.3. Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, this Mobile DRAM includes the internal temperature sensor and control units to control the self refresh-
cycle automatically according to the real device temperature.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Self Refresh Current (IDD6)
-E
-G
Temperature Range
Unit
Full Array 1/2 Array 1/4 Array Full Array 1/2 Array 1/4 Array
45 °C¹⁾
85 °C
600
500
450
500
440
400
uA
1200
900
750
1000
800
700
NOTE :
1) It has +/- 5 °C tolerance.
9.4. Partial Array Self Refresh (PASR)
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
Figure 4. EMRS code and TCSR , PASR
BA1=0 BA1=0
BA0=0 BA0=1
BA1=0 BA1=0
BA0=0 BA0=1
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- Full Array
BA1=1 BA1=1
BA0=0 BA0=1
- 1/2 Array
BA1=1 BA1=1
BA0=0 BA0=1
- 1/4 Array
Partial Self Refresh Area
- 12 -
Sept 2007