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K4E660411D Datasheet, PDF (9/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660411D, K4E640411D
READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tRC
tRAS
tCRP
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRAL
tRCS
OPEN
tRAC
tAA
tOEA
tOLZ
tCAC
tCLZ
tRP
tCRP
tRRH
tRCH
tCEZ
tOEZ
tWEZ
tREZ
DATA-OUT
Don′t care
Undefined