K4E660411D Datasheet, PDF (4/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660411D, K4E640411D
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
ICC1
Power
Don′t care
Speed
-50
-60
Max
K4E660411D
90
80
ICC2
Normal
Don′t care
2
ICC3
Don′t care
-50
-60
90
80
ICC4
Don′t care
-50
-60
100
90
ICC5
Normal
Don′t care
1
ICC6
Don′t care
-50
-60
120
110
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
CMOS DRAM
K4E640411D
120
110
2
120
110
110
100
1
120
110
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.