DS_K7N803601B Datasheet, PDF (9/18 Pages) Samsung semiconductor – 256Kx36 & 512Kx18-Bit Pipelined NtRAM

K7N803601B
K7N801801B
256Kx36 & 512Kx18 Pipelined NtRAM^TM
ASYNCHRONOUS TRUTH TABLE
Operation
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
H
X
High-Z
L
L
DQ
L
H
High-Z
L
X Din, High-Z
L
X
High-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on VDD Supply Relative to VSS
Voltage on Any Other Pin Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Storage Temperature Range Under Bias
SYMBOL
VDD
VIN
PD
TSTG
TOPR
TOPR
TBIAS
RATING
-0.3 to 4.6
-0.3 to VDD+0.3
1.6
-65 to 150
0 to 70
-40 to 85
-10 to 85
UNIT
V
V
W
°C
°C
°C
°C
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Supply Voltage
VDD
VDDQ
3.135
3.135
Ground
VSS
0
* The above parameters are also guaranteed at industrial temperature range.
Typ.
3.3
3.3
0
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
2.375
2.5
Ground
VSS
0
0
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
SYMBOL
TEST CONDITION
MIN
Input Capacitance
Output Capacitance
CIN
VIN=0V
-
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
MAX
3.465
3.465
0
MAX
3.465
2.9
0
MAX
5
7
UNIT
V
V
V
UNIT
V
V
V
UNIT
pF
pF
-9-
Nov. 2003
Rev 3.0