K9F2808Q0B Datasheet, PDF (8/29 Pages) Samsung semiconductor – 16M x 8 Bit NAND Flash Memory

K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
Figure 1. FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
A9 - A 23
A0 - A7
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Command
A8
Command
Register
CE
Control Logic
RE
& High Voltage
WE
Generator
128M + 4M Bit
NAND Flash
ARRAY
(512 + 16)Byte x 32768
Page Register & S/A
Y-Gating
I/O Buffers & Latches
Vcc/V CCQ
VSS
Global Buffers
Output
Driver
I/0 0
I/0 7
CLE ALE WP
Figure 2. ARRAY ORGANIZATION
1 Block =32 Pages
= (16K + 512) Byte
32K Pages
(=1,024 Blocks)
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
512B Byte
16 Byte
1 Page = 528 Byte
1 Block = 528 Bytes x 32 Pages
= (16K + 512) Byte
1 Device = 528Byte x 32Pages x 1024 Blocks
= 132 Mbits
8 bit
Page Register
512 Byte
16 Byte
I/O 0 ~ I/O 7
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6
1st Cycle
A0
A1
A2
A3
A4
A5
A6
2nd Cycle A9
A10
A11
A12
A13
A14
A15
3rd Cycle A17
A18
A19
A20
A21
A22
A23
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A 8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 7
A7
A16
*L
Column Address
Row Address
(Page Address)
8