K9F2808Q0B Datasheet, PDF (29/29 Pages) Samsung semiconductor – 16M x 8 Bit NAND Flash Memory

K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
Data Protection & Powerup sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V/2V(K9F2808Q0B:1.1V, K9F2808U0B:2V). WP pin provides hardware pro-
tection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 1µs is required
before internal circuit gets ready for any command sequences as shown in Figure 14. The two step command sequence for program/
erase provides additional software protection.
Figure 14. AC Waveforms for Power Transition
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
VCC
High
WP
WE
10µs
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
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