K4S56163PF Datasheet, PDF (8/12 Pages) Samsung semiconductor – 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S56163PF - R(B)G/F
Mobile-SDRAM
AC CHARACTERISTICS(AC operating conditions unless otherwise noted)
Parameter
Symbol
-75
Min Max
-90
Min Max
CAS latency=3 tCC
7.5
9
CLK cycle time
CAS latency=2 tCC
12
1000
12
1000
CAS latency=1 tCC
-
-
CAS latency=3 tSAC
6
7
CLK to valid output delay CAS latency=2 tSAC
9
9
CAS latency=1 tSAC
-
-
CAS latency=3 tOH
2.0
2.0
Output data hold time
CAS latency=2 tOH
2.0
2.0
CAS latency=1 tOH
-
-
CLK high pulse width
tCH
2.5
3.0
CLK low pulse width
tCL
2.5
3.0
Input setup time
tSS
2.0
2.0
Input hold time
tSH
1
1
CLK to output in Low-Z
tSLZ
1
1
CAS latency=3
6
7
CLK to output in Hi-Z
CAS latency=2 tSHZ
9
9
CAS latency=1
-
-
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
-1L
Min Max
Unit Note
9
15
1000 ns
1
25
7
10
ns
1,2
20
2.0
2.0
ns
2
2.0
3.0
ns
3
3.0
ns
3
2.0
ns
3
1.5
ns
3
1
ns
2
7
10
ns
20
8
September 2004