KFG2816Q1M Datasheet, PDF (76/87 Pages) Samsung semiconductor – OneNAND SPECIFICATION

OneNAND128
AC CHARACTERISTICS
Asynchronous write operation
Parameter
WE Cycle Time
AVD low pulse width
Address Setup to rising edge of AVD
Address Setup to falling edge of WE
Address Hold to rising edge of AVD
Address Hold to rising edge of WE
Data Setup to rising edge of WE
Data Hold from rising edge of WE
CE Setup to falling edge of WE
CE Hold from rising edge of WE
CE Hold from rising edge of WE
WE Pulse Width
WE Pulse Width High
AVD Disable to WE Disable
WE Disable to AVD Enable
AVD toggled
AVD tied to CE
Symbol
tWC
tAVDP
tAAVDS
tAWES
tAAVDH
tAH
tDS
tDH
tCS
tCH1
tCH2
tWPL
tWPH
tVLWH
tWEA
FLASH MEMORY
KFG2816X1M
Unit
Min
Typ
Max
70
-
-
ns
12
-
-
ns
7
-
-
ns
0
7
-
-
ns
10
ns
10
-
-
ns
4
-
-
ns
0
-
-
ns
0
-
-
ns
10
-
-
ns
40
-
-
ns
30
-
-
ns
15
-
-
ns
15
-
-
ns
76