KFG2816Q1M Datasheet, PDF (52/87 Pages) Samsung semiconductor – OneNAND SPECIFICATION

OneNAND128
FLASH MEMORY
OTP Load(OTP Access+Load NAND)
OTP area is separated from NAND Flash Array, so it is accessed by OTP Access command instead of FBA. The content of OTP
could be loaded with the same sequence as normal load operation after being accessed by the command. If user wants to exit from
OTP access mode, Cold, Warm, Hot, and NAND Flash Core Reset operation should be done.
Start
Write ’FBA’ of Flash¹⁾
Add: F100h DQ=FBA
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write ’FPA, FSA’ of Flash¹⁾
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Host reads data from
DataRAM
OTP Load completed
Do Cold/Warm/Hot
/NAND Flash Core reset
OTP Exit
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
Figure 21. OTP Load operation flow-chart
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