KFG5616Q1A-DEB6 Datasheet, PDF (70/113 Pages) Samsung semiconductor – OneNAND Specification FLASH MEMORY

OneNAND256(KFG5616x1A-xxB6)
FLASH MEMORY
3.10 Erase Operation
There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase.
3.10.1 Block Erase Operation
See Timing Diagram 6.8
The device can be erased one block at a time. To erase a block is to write all 1's into the desired memory block by executing the Inter-
nal Erase Routine. All previous data is lost.
Block Erase Operation Flow Chart
Start
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0?
YES
Erase completed
NO
Erase Error
* ^{: If erase operation results in an error, map out}
the failing block and replace it with another block.
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