K9F6408U0M-TCB0 Datasheet, PDF (7/26 Pages) Samsung semiconductor – 8M x 8 Bit NAND Flash Memory

K9F6408U0M-TCB0, K9F6408U0M-TIB0
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
1014
Typ.
1020
Max
1024
Unit
Blocks
NOTE :
1. The K9F6408U0M may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
invalid blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are
guaranteed though its initial number could be reduced. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(K9F6408U0M-TCB0:TA=0 to 70°C, K9F6408U0M-TIB0:TA=-40 to 85°C, VCC=2.7V~3.6V unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load (3.0V +/-10%)
1 TTL GATE and CL = 50pF
Output Load (3.3V +/-10%)
1 TTL GATE and CL = 100pF
CAPACITANCE(TA=25°C, VCC=3.3V, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
Test Condition
Min
CI/O
VIL=0V
-
CIN
VIN=0V
-
Max
10
10
Unit
pF
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
WE
RE
SE
WP
Mode
H
L
L
L
H
L
H
X
X
Command Input
Read Mode
H
X
X
Address Input(3clock)
H
L
L
L
H
L
H
X
H
Command Input
Write Mode
H
X
H
Address Input(3clock)
L
L
L
H
L/H⁽³⁾
H Data Input
L
L
L
H
L/H⁽³⁾
X Sequential Read & Data Output
L
L
L
H
H
L/H⁽³⁾
X During Read(Busy)
X
X
X
X
X
L/H⁽³⁾
H During Program(Busy)
X
X
X
X
X
X
H During Erase(Busy)
X
X⁽¹⁾
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/VCC⁽²⁾ 0V/VCC⁽²⁾ Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
Program/Erase Characteristics
Parameter
Program Time
Number of Partial Program Cycles in the Same Page
Block Erase Time
Symbol
Min
tPROG
-
Nop
-
tBERS
-
Typ
Max
200
1000
-
10
2
4
Unit
µs
cycles
ms
7