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K9F6408U0M-TCB0 Datasheet, PDF (6/26 Pages) Samsung semiconductor – 8M x 8 Bit NAND Flash Memory
K9F6408U0M-TCB0, K9F6408U0M-TIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
K9F6408U0M-TCB0
Temperature Under Bias
K9F6408U0M-TIB0
Storage Temperature
Short Circuit Output Current
Symbol
VIN
VCC
VCCQ
TBIAS
TSTG
IOS
Rating
-0.6 to + 6.0
-0.6 to + 4.6
-0.6 to + 6.0
-10 to + 125
-40 to + 125
-65 to + 150
5
Unit
V
V
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408U0M-TCB0:TA=0 to 70°C, K9F6408U0M-TIB0:TA=-40 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VCCQ*1
2.7
-
5.5
V
Supply Voltage
VSS
0
0
0
V
NOTE :
1. VCC and VCCQ pins are separated each other.
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
Program
Erase
ICC1 tcycle=50ns, CE=VIL, IOUT=0mA
-
10
ICC2
-
-
10
ICC3
-
-
10
20
20
mA
20
Stand-by Current(TTL)
ISB1 CE=VIH, WP=SE=0V/VCC
-
-
1
Stand-by Current(CMOS)
ISB2 CE=VCC-0.2, WP=SE=0V/VCC
-
10
50
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to 3.6V
ILO
VOUT=0 to 3.6V
-
-
±10
µA
-
-
±10
Input High Voltage
I/O pins
VIH
Except I/O pins
2.0
-
VCCQ+0.3
2.0
-
VCC+0.3
Input Low Voltage, All inputs
VIL
-
-0.3
-
0.8
V
Output High Voltage Level
VOH IOH=-400µA
2.4
-
-
Output Low Voltage Level
VOL IOL=2.1mA
-
-
0.4
Output Low Current(R/B)
IOL(R/B) VOL=0.4V
8
10
-
mA
6