K9F5608U0M- Datasheet, PDF (6/26 Pages) Samsung semiconductor – 32M x 8 Bit NAND Flash Memory

K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
K9F5608U0M-YCB0
K9F5608U0M-YIB0
K9F5608U0M-YCB0
K9F5608U0M-YIB0
Symbol
VIN
VCC
TBIAS
TSTG
Rating
-0.6 to + 4.6
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
Unit
V
°C
°C
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F5608U0M-YCB0 :TA=0 to 70°C, K9F5608U0M-YIB0:TA=-40 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min Typ
Max
Unit
Operating
Current
Sequential Read
Program
Erase
Stand-by Current(TTL)
ICC1 tRC=50ns, CE=VIL, IOUT=0mA
-
10
ICC2
-
-
10
ICC3
-
-
10
CE=VIH, WP=GND input (Pin #6)
ISB1
-
-
= 0V/VCC
20
20
20
mA
1
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
CE=VCC-0.2, WP=GND input (Pin
ISB2
-
10
50
#6) = 0V/VCC
ILI
VIN=0 to 3.6V
-
-
±10
µA
ILO
VOUT=0 to 3.6V
-
-
±10
Input High Voltage
VIH
-
2.0
-
VCC+0.3
Input Low Voltage, All inputs
Output High Voltage Level
VIL
-
VOH IOH=-400µA
-0.3
-
2.4
-
0.8
V
-
Output Low Voltage Level
VOL IOL=2.1mA
-
-
0.4
Output Low Current(R/B)
IOL(R/B) VOL=0.4V
8
10
-
mA
6