K9F5608U0M- Datasheet, PDF (21/26 Pages) Samsung semiconductor – 32M x 8 Bit NAND Flash Memory

K9F5608U0M-YCB0,K9F5608U0M-YIB0
Figure 4. Read2 Operation
CLE
CE
WE
ALE
R/B
tR
RE
I/O0~7
50h ^{Start Add.(3Cycle)}
A0 ~ A3 & A9 ~ A24
(A4 ~ A7 :
Don't Care)
1st half array
2nd half array
FLASH MEMORY
Data Output(Sequential)
Spare Field
Figure 5. Sequential Row Read1 Operation
Data Field
Spare Field
tR
tR
tR
R/B
I/O0 ~ 7
Block
00h
Start Add.(3Cycle)
01h
A0 ~ A7 & A9 ~ A24
(GND input=L, 00h Command)
1st half array
2nd half array
1st
2nd
Nth
Data Output
1st
Data Output
2nd
(528 Byte)
Data Output
Nth
(528 Byte)
(GND input=L, 01h Command)
1st half array
2nd half array
(GND input=H, 00h Command)
1st half array
2nd half array
1st
1st
2nd
2nd
Nth
Nth
Data Field
Spare Field
Data Field
Spare Field
Data Field Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
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