K4M563233E-M Datasheet, PDF (6/12 Pages) Samsung semiconductor – 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M563233E - M(E)E/N/G/C/L/F
Mobile-SDRAM
AC OPERATING TEST CONDITIONS(VDD = 2.7V ∼ 3.6V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4 / 0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Figure 2
Output
870Ω
VDDQ
1200Ω
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
30pF
Output
Figure 1. DC Output Load Circuit
Z0=50Ω
Vtt=0.5 x VDDQ
50Ω
30pF
Figure 2. AC Output Load Circuit
February 2004