K1S321611C Datasheet, PDF (6/10 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321611C
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Test Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): CL=50pF
AC CHARACTERISTICS(Vcc=2.7~3.1V, TA=-40 to 85°C)
Parameter List
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Read
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write
UB, LB Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. tWP(min)=70ns for continuous write operation over 50 times.
Symbol
tRC
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
Preliminary
UtRAM
Dout
CL
1. Including scope and jig capacitance
Speed
70ns
Min
Max
70
-
-
70
-
70
-
35
-
70
10
-
10
-
5
-
0
25
0
25
0
25
5
-
70
-
60
-
0
-
60
-
60
-
55¹⁾
-
0
-
0
25
30
-
0
-
5
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-6-
Revision 0.2
August 2003