K1S321611C Datasheet, PDF (5/10 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321611C
Preliminary
UtRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K1S321611C-FI70
48-FBGA, 70ns, 2.9V
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.3³⁾
Typ
Max
Unit
2.9
3.1
V
0
0
V
-
VCC+0.3²⁾
V
-
0.6
V
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Symbol
Test Conditions
Min
ILI VIN=Vss to Vcc
-1
ILO ^{CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,}
-1
VIO=Vss to Vcc
ICC1 ^{Cycle time=1µs, 100% duty, IIO=0mA, CS1≤0.2V, LB≤0.2V}
-
or/and UB≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 ^{Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH}
-
LB=VIL or/and UB=VIL, VIN=VIH or VIL
VOL IOL = 2.1mA
-
VOH IOH = -1.0mA
2.4
Other inputs=0~Vcc
ISB1 _{1) CS1≥VCC-0.2V, CS2≥VCC-0.2V(CS1 controlled) or}
-
2) 0V ≤ CS2 ≤ 0.2V(CS2 controlled)
Typ Max Unit
- 1 µA
- 1 µA
- 7 mA
- 35 mA
- 0.4 V
-
-V
- 100 µA
-5-
Revision 0.2
August 2003