K6R4008C1D Datasheet, PDF (5/10 Pages) Samsung semiconductor – 512Kx8 Bit High Speed Static RAM(5.0V Operating)

K6R4008C1D
PRELIMINARY
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
VCC
4.5
5.0
VSS
0
0
VIH
2.2
-
VIL
-0.5**
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA
Max
5.5
0
VCC+0.5***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max Unit
Input Leakage Current
Output Leakage Current
ILI
VIN=VSS to VCC
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
10ns
10ns
-
-
65
mA
75
Standby Current
Output Low Voltage Level
ISB
Min. Cycle, CS=VIH
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
VOL
IOL=8mA
-
20
mA
-
5
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
VI/O=0V
VIN=0V
TYP
-
-
Max
8
6
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
-5-
Rev. 2.0
July 2004