K4S64323LF-S Datasheet, PDF (5/8 Pages) Samsung semiconductor – 2Mx32 Mobile SDRAM 90FBGA

K4S64323LF-S(D)G/S
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 85°C)
Parameter
Operating Current
(One Bank Active)
Sym-
bol
Test Condition
IC C 1
Burst length = 1
tRC ≥ tR C(min)
IO = 0 mA
Version
-75 -1H -1L -15
70 70 65 60
Precharge Standby Current ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
0.5
in power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.5
Precharge Standby Current
ICC2 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
10
in non power-down mode
IC C 2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
7
Active Standby Current
ICC3P CKE ≤ VIL(max), tCC = 10ns
5
in power-down mode
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
Active Standby Current
ICC3 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
in non power-down mode
(One Bank Active)
IC C 3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
20
Operating Current
Refresh Current
Self Refresh Current
IC C 4
IC C 5
IO = 0 mA ,Page burst
tRC ≥ tR C(min)
ICC6 CKE ≤ 0.2V
TCSR Range
4 Banks
-S(D)G 2 Banks
1 Bank
85 70
115 110
Max 45°C
235
210
195
70 60
100 80
Max 85°C
350
290
270
4 Banks
130
230
-S(D)S 2 Banks
105
170
1 Bank
90
150
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S64323LF-S(D)G**
4. K4S64323LF-S(D)S**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Unit Note
mA 1
mA
mA
mA
mA
mA
mA 1
mA 2
°C
uA 3
uA 4
Rev. 1.5 Dec 2002