K4S643233H Datasheet, PDF (5/12 Pages) Samsung semiconductor – Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
Unit Note
-60 -75 -1H -1L
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
85
80
75
75 mA 1
Precharge Standby Current ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
in power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
Precharge Standby Current
in non power-down mode
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC2N _{Input signals are changed one time during}
20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
0.5
mA
0.5
11
mA
8
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC3N _{Input signals are changed one time during}
20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
mA
5
22
mA
22
mA
Operating Current
(Burst Mode)
IO = 0 mA
ICC4
Page burst
4Banks Activated
tCCD = 2CLKs
100 95 75 75 mA 1
Refresh Current
ICC5 tRC ≥ tRC(min)
145 135 120 120 mA 2
-E/C
-N/L
1500
350
4
uA
5
Self Refresh Current
ICC6 CKE ≤ 0.2V
-G/F
Internal TCSR
Full Array
1/2 of Full Array
Max 40
235
210
Max 85/70 °C 3
350
290
uA 6
1/4 of Full Array
195
270
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C
4. K4S643233H-F(H)E/C**
5. K4S643233H-F(H)N/L**
6. K4S643233H-F(H)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
February 2004