K4S643233H Datasheet, PDF (4/12 Pages) Samsung semiconductor – Mobile-SDRAM

K4S643233H - F(H)E/N/G/C/L/F
Mobile-SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.0
Short circuit current
IOS
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD
2.7
3.0
3.6
V
VDDQ
2.7
3.0
3.6
V
Input logic high voltage
VIH
2.2
3.0
VDDQ + 0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.5
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
NOTES :
1. VIH (max) = 5.3V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 3.0V & 3.3V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Symbol
Min
Max
Clock
CCLK
-
4.0
RAS, CAS, WE, CS, CKE
CIN
-
4.0
DQM
CIN
-
4.0
Address
CADD
-
4.0
DQ0 ~ DQ31
COUT
-
6.0
Unit
pF
pF
pF
pF
pF
Note
February 2004