K4S641632E Datasheet, PDF (5/10 Pages) Samsung semiconductor – 64Mbit SDRAM

K4S641632E
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Version
Unit Note
- 50 - 55 -60 - 70 - 75 -1H -1L
160 150 140 115 110 100 100 mA 1
Precharge standby current ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
in power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
1
mA
1
Precharge standby current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
15
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
mA
Active standby current in
power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
3
mA
3
Active standby current in
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
non power-down mode
mA
(One bank active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0 mA
ICC4
Page burst
4Banks Activated
tCCD = 2CLKs
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
180 170 160 140 135 110 110 mA 1
180 170 160 140 135 125 125 mA 2
C
1
mA 3
L
400
uA 4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632E-TC**
4. K4S641632E-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev.0.2 Sept. 2001